Showing posts with label LED Wiki. Show all posts
Showing posts with label LED Wiki. Show all posts

Thursday, November 28, 2013

Halogen bulbs replacement needs high efficiency LED drivers

If you are looking to replace halogen bulbs with LEDs, combining a rectifier bridge and a current-controlled synchronous step-up/step-down converter creates a high power factor driver circuit.


halogen-bulbs-replacement-needs-high-efficiency-led-drivers halogen-bulbs-replacement-needs-high-efficiency-led-drivers


If you are looking to replace halogen bulbs with LEDs, combining a rectifier bridge and a current-controlled synchronous step-up/step-down converter creates a high power factor driver circuit, writes Keith Szolusha


LT Journal of Analog Innovation V23N3 – October 2013 – Meet GreeLEDs are increasingly used in 24VAC and 12VAC lighting systems as an energy efficient and high performance alternative to halogen lamps.


Power converters that drive the LEDs should have a high power factor (above 90% in order to meet generally accepted green standards), should be efficient, use a minimal number of components and should run cool. They do not need isolation.


One solution that meets these requirements combines a rectifier bridge and a current-controlled synchronous step-up/step-down converter. Specifically, a synchronous 4-switch buck-boost converter can be paired with a 4-switch ideal diode rectifier bridge for high power LEDs. A lower power design can use a standard diode bridge.


Both solutions are shown here.


The LT3791 60V 4-switch synchronous buck-boost controller IC can drive constant current (either DC or pulsating) into a string of high power LEDs.


It features an output current feedback loop used to drive constant current through a string of LEDs, and a CTRL dimming input pin that can be tied to the 120Hz half-sine wave output of a rectifier bridge to create a high power factor pulsating LED current output.


The LT4320 is an ideal diode rectifier bridge that drives four MOSFETs in place of four typical rectifier diodes for highest efficiency conversion of the 60Hz 24VAC input to 24VRMS 120Hz pulsating output. When currents reach 5A and higher, the diodes in a standard rectifier bridge dissipate significant power and heat up.


The diode rectifier bridge helps high power AC applications run efficient and cool by driving low resistance external N-channel FETs.


LED-driver-Fig1 LED-driver-Fig1


Figure 1 shows an LED driver that operates with 98.1% power factor directly from 24VAC. It can drive up to 25V of LEDS with 120Hz pulsating power with LED current peaking at 4.4A.


At 120Hz, the pulsing of the light is not detectable by the human eye and is seen as constant brightness. The high power factor 24AC input voltage and current waveforms are shown in Figure 2. The 10Hz pulsating LED current waveforms are shown in Figure 3.


LED current foldback with the CTRL pin voltage is used to achieve the high power factor. The maximum LED current is set by RLED at 4.5A, but the CTRL pin monitors the post-rectifier 120Hz PVIN input voltage and shapes the LED current waveform to match the input.


When the input drops below the shutdown pin threshold, the IC goes into shutdown and switching stops. The LED current trails off as the output capacitors are discharged and soon enough, the input rises above the shutdown pin threshold and the buck-boost converter starts back up. With the CTRL pin folding back the LED current at low input, start-up is not harsh and inrush currents do not affect the high power factor.


The 24VAC pulsating LED driver converter in Figure 1 delivers approximately 60W of LED lighting at 94% efficiency.


This is roughly equivalent to 600W of halogen lighting replacement without using lead, mercury, argon, and Xenon or krypton gases.


The four synchronous switches of the converter and those of the ideal diode bridge are responsible for the high efficiency.


Photo above shows the circuit components remaining cool despite the 60W conversion. The components have less than 24°C temperature rise, showing that there is plenty of room to spare for even higher power applications. A standard rectifier bridge would produce about a 50°C temperature rise and run several efficiency points lower.


Total efficiency is calculated by measuring the input power, the power factor, and the delivered output power separately. The values of 63.0W real input power, 64.4W apparent input power and 98.1% power factor are measured with an HP 6812A AC power source.


LED-driver-Fig2 LED-driver-Fig2


Measurement of the output power is a bit more complex. A current probe and oscilloscope are used to capture the pulsing current and voltage waveforms at the output of the converter.


From these waveforms, the converter output RMS current and voltage is calculated for the on-time (tON) of the LED.


The on-time output power is:

POUT(ON) = VRMS(ON) • IRMS(ON)


Output power is zero during LED off-time, where the current is zero. The output power of 60W is calculated via a simple duty cycle equation:

POUT = POUT(ON) • tON • 120Hz.

Overall efficiency = output power divided by real input power.


The circuit in Figure 4 is a 24W pulsating LED driver that operates from 24VAC input. Because the power level here is less than half of the 60W LED driver in Figure 1, the rectifier bridge shown in Figure 4 is made from four discrete Schottky diodes, instead of ideal diodes.


LED-driver-Fig3 LED-driver-Fig3


The trade-offs for simplicity are slightly lower efficiency and additional heat dissipation.


The principals of the 24W circuit are the same as the 60W circuit and the two operate in the same manner. Efficiency of the 24W circuit is 90%, lower than the 94% achieved by the 60W circuit. Nevertheless, this loss is acceptable due to the overall lower power, making the temperature rise in the discrete rectifier bridge components comparable between the two. With the discrete diode rectifier bridge, the components only heat up to 49°C as shown in Figure 7, well within the requirements of most high power LED drivers.


For higher efficiency, simply replace the discrete rectifier with a LT4320-based rectifier. In general, as power levels and temperatures rise, the need for synchronous rectification in both the converter and rectifier goes up.


Keith Szolusha, applications engineering section leader, power products at Linear Technology


LED-driver-Fig4 LED-driver-Fig4



Buy High power LED drivers


High-Power-LED-Driver-at-Topledlight High-Power-LED-Driver-at-Topledlight




Halogen bulbs replacement needs high efficiency LED drivers

Monday, November 25, 2013

HL1606 LED Strip

HL1606 is a LED driver IC with SPI controlled. This post tells readers HL1606 Features, HL1606 Pin definition, HL1606 Data format, build-in module description, HL1606 electric parameter, HL1606 Timing diagram, Impression Drawing & Data Format, and HL1606 application.


HL1606 is a LED driver IC with SPI controlled. This post tells readers HL1606 Features, HL1606 Pin definition, HL1606 Data format, build-in module description, HL1606 electric parameter, HL1606 Timing diagram, Impression Drawing & Data Format, and HL1606 application.


HL1606 DESCRIPTION


HL1606 is a LED driver IC with SPI controlled. We can get “complex mode changes” by fewer data.


HL1606 FEATURES



  • NMOS output

  • SPI controlled,plus synchronization speed control port: S-I

  • PWM output,frequency:500Hz

  • With a internal “change model” unit,only data calls, reducing the amount of data.

  • Speed control bit,can speed up “changes in a pixel” rate of 2 times.

  • Latch enable bit,concatenated string at a point can be read or not read data.

  • Built-6 road, drive two pixels˄three-output get a pixel˅


HL1606 Pin definition


HL1606-Pin-Definition HL1606-Pin-Definition



























































No.NameDescriptionNo.NameDescription
1S-ISync / speed clock input7D-OData buffer output
2D-IData input8S-OSync / speed clock buffer output
3CK-IClock input9GNDGND
4L-ILatch signal input10~12B3~B13 way drive output
5L-OLatch signal buffer output13~15A3~A13 way drive output
6CK-OClock buffer output16VDDVDD

HL1606 Data format



























D1D2D3D4D5D6D7D8D9D10D11D12D13D14D15D16HIGH
A1~A3 LED Control data-1B1~B3 LED Control date-2

Data format of A1-A3 LED Control data-1(B1-B3 LED Control data-2 can refer it)




















D1˄D9˅D2˄D10˅D3˄D11˅D4˄D12˅D5˄D13˅D6˄D14˅D7˄D15˅D8˄D16˅
A1˄B1˅Control bitA2˄B2˅Control bitA3˄B3˅Control bitControl bit of speedLatch enable bit

































 

D2=0ǃD1=0 A1 Light out


 

D4=0ǃD3=0 A2 Light out


 

D6=0ǃD5=0 A3 Light out


 

D7=0


Default rate


 

D8=0


Can not latch


D2=0ǃD1=1A1 Light onD4=0ǃD3=1 A2 Light onD6=0ǃD5=1A3 Light on
D2=1ǃD1=0A1 fadeinD4=1ǃD3=0A2 fadeinD6=1ǃD5=0A3 fadeinD7=1

2 times rate


D8=1

Allowed to latch


D2=1ǃD1=1 A1 fadeoutD4=1ǃD3=1 A2 fadeoutD6=1ǃD5=1A3 fadeout

Description of HL1606 build-in module


HL1606-build-in-module HL1606-build-in-module


Fadein module˖

When a data bit is 10(D2D1 or D4D3 or D6D5) and the latch is enable, corresponding output state of LED is fadein. After get the brightest state, it will keep the state, until the new data input by effective latch.
Fadeout module˖

When a data bit is 11(D2D1 or D4D3 or D6D5) and the latch is enable, corresponding output state of LED is fadeout. After the lights out, it will keep the state, until the new data input by effective latch.
T Cycle time of change–T˖

When D7=0,T=Tzc×128 set ,series is 128. For example: When Zc=50Hz,T=2.56s,if every latch

is effective, fadein/fadeout module will resume the change.


Electric parameter˄VDD=5V,temperature=25℃˅




























































































ITEMSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNIT
Threshold voltage of output

tube


VOLIDS≤1  A,VDD=5V 


 


 

6


 

V


 

Operating voltage


VCCStable and functioning

properly


 

3


 

5


 

5.5


 

V


Operating currentICCVDD=5V,oscillations, no load200400 A
DATA input, changes of high

level and low level


VINStable and functioning

properly


 

3.8


 


 

6


 

V


Output current of driveIOLVDD=5V,VDS=0.8V30mA
 

Output current of buffer


IOHVDD=5V,VDS=-0.8V5mA
IOLVDD=5V,VDS=0.8V10mA
temperatureTemp 02570
Work frequency of terminal-S 

Fs


VDD=5V   

200


 

Hz



HL1606 Timing diagram(entry data from high level)


t0≥300ns ˗t1≥1 s˗T≥250N(ns),N: the number of cascade˗t2≈100nsDŽ


HL1606-Timing-Diagram HL1606-Timing-Diagram


Impression Drawing & Data Format


Monochrome , one-way, gradually run


HL1606-Monochrome-one-way-gradually-run HL1606-Monochrome-one-way-gradually-run


Description: There is a “gradual change” mode in HL1606, so D_I only need one set of data”10110000”, then input ”0” to the end is okay. Clock signal has been sent to CK_I, sent a “1” to L_I after 8 clock signal. Change once the signal of S_I, the output decline in a series. A clock cycle in S_I,. output is keep in 512Hz refresh frequency, to maintain the same level(series) of output duty cycle refresh. If no data sent to S_I, output will remain the same duty cycle refresh.


Colorful fluttering


HL1606-Colorful-fluttering HL1606-Colorful-fluttering


Description: There is a “gradual change” mode in HL1606, so D_I only need one set of data”10001011”, then input ”0” to the end is okay(red to green gradually). Clock signal has been sent to CK_I, sent a “1” to L_I after 8 clock signal. Change once the signal of S_I, the output series change once. A clock cycle in S_I,. output is keep in 512Hz refresh frequency, to maintain the same level(series) of output duty cycle refresh. If no data sent to S_I, output will remain the same duty cycle refresh. Just finished in a color change, change the data of D-I.


Full-color fluttering


HL1606-Full-color-fluttering HL1606-Full-color-fluttering


Description: There is a “gradual change” mode in HL1606, so D_I only need one set of data”10001001”, then input ”0” to the end is okay(red to yellow gradually). Clock signal has been sent to CK_I, sent a “1” to L_I after 8 clock signal. Change once the signal of S_I, the output series change once. A clock cycle in S_I,. output is keep in 512Hz refresh frequency, to maintain the same level(series) of output duty cycle refresh. If no data sent to S_I, output will remain the same duty cycle refresh. Just finished in a color change, change the data of D-I.


HL1606 Application


HL1606-Application HL1606-Application


Application Notes



  • Picture(1),1st connection method: triode will not connect to output of IC, output current reach 30Ma,output can connect to two-ways, ensure that the output voltage must be less than 6V.

  • Picture(2), 2nd connection method: triode connect to output of IC. Because the NPN-type transistor at the base took on the extreme pull-up resistor, the “output duty cycle of IC” and the” LED brightness” is inversely proportional to. When the IC doesn’t output, the transistor fully conducting, LED full-bright.

  • Picture (3), internal structure of the “output port of IC”. The output is NMOS open-drain output.

  • Picture (4), application drawing of cascade. Connection method of output termination (U1-UN) is same. Ceramic capacitor ”※” should be as close as possible to the chip, and work before the power input to the IC. Resistance “#” is adjustable, adjust the brightness of LED by adjust the value of resistance, and then we can get different blending effect. When the IC work, first into the highest, then into the low, the output is after the drive of “chip control signal”, this output can be used as the input signal of back-end circuit.


HL1606 LED products


:http://www.topledlight.com/index.php?main_page=advanced_search_result&inc_subcat=1&search_in_description=1&categories_id=&keyword=HL1606


Download:HL1606 Datasheet PDF



HL1606 LED Strip

Monday, October 7, 2013

MOCVD Metal-organic Chemical Vapor Deposition - LED Wiki

Metal-organic Chemical Vapor Deposition, short for MOCVD, is a chemical vapour deposition method used to produce single or polycrystalline thin films. The MOCVD machine is the most critical equipment in LED chip production processes. MOCVD is also known as organometallic vapour phase epitaxy (OMVPE) or Metalorganic vapour phase epitaxy (MOVPE). It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. – LED wiki


In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition. This takes place not in a vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.



a-made-in-China-MOCVD-machine

a-made-in-China-MOCVD-machine



Basic principles of the MOCVD process

In MOCVD ultra pure gases are injected into a reactor and finely dosed to deposit a very thin layer of atoms onto a semiconductor wafer. Surface reaction of organic compounds or metalorganics and hydrides containing the required chemical elements creates conditions for crystalline growth – epitaxy of materials and compound semiconductors. Unlike traditional silicon semiconductors, these semiconductors may contain combinations of Group III and Group V, Group II and Group VI, Group IV, or Group IV, V and VI elements.


For example, indium phosphide could be grown in a reactor on a heated substrate by introducing trimethylindium ((CH3)3In) and phosphine (PH3) in a first step. The heated organic precursor molecules decompose in the absence of oxygen – pyrolysis. Pyrolysis leaves the atoms on the substrate surface in the second step. The atoms bond to the substrate surface and a new crystalline layer is grown in the last step. Formation of this epitaxial layer occurs at the substrate surface.


Required pyrolysis temperature increases with increasing chemical bond strength of the precursor. The more carbon atoms are attached to the central metal atom the weaker the bond.The diffusion of atoms on the substrate surface is affected by atomic steps on the surface.


The vapor pressure of the metal organic source is an important consideration in MOCVD, since it determines the concentration of the source material in the reaction and the deposition rate.



mechanism-of-the-metal-organic-chemical-vapor-deposition-of-gallium-arsenide

mechanism-of-the-metal-organic-chemical-vapor-deposition-of-gallium-arsenide




MOCVD Metal-organic Chemical Vapor Deposition - LED Wiki